FDC638P - onsemi

Description: RDS(ON) = 48 mΩ @ VGS = –4.5 V RDS(ON) = 65 mΩ @ VGS = –2.5 V; –4.5 A, –20 V.; Low gate charge (10 nC typical); High performance trench technology for extremely low RDS(ON); SuperSOT ™ –6 package: small footprint (72% smaller than standard SO-8; low profile (1mm thick)