FDC6420C - onsemi

Description: RDS(on) = 70 mΩ@ VGS = 4.5 V ; Q1 3.0 A, 20V ; RDS(on) = 95 mΩ @ VGS = 2.5 V ; Low gate charge ; RDS(on) = 125 mΩ@ VGS = -4.5 V ; High performance trench technology for extremely low RDS(ON) ; SuperSOT –6 package: small footprint (72% smaller thanSO-8); low profile (1mm thick). ; Q2 –2.2 A, 20V. ; RDS(on) = 190 mΩ @ VGS = -2.5 V