FDC642P - onsemi

Description: Low gate charge (11nC typical). ; Fast switching speed. ; Termination is Lead-free and RoHS Compliant ; High performance trench technology for extremely low rDS(ON). ; Max rDS(ON) = 65mΩ at VGS = -4.5 V, ID = -4.0A ; Max rDS(ON) = 100mΩ at VGS = -2.5 V, ID = -3.2A ; SuperSOT™-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick)