Please enter a minimum 3 letters or numbers
Technical Content
Part Image

FDC642P - onsemi

Description: Low gate charge (11nC typical). ; Fast switching speed. ; Termination is Lead-free and RoHS Compliant ; High performance trench technology for extremely low rDS(ON). ; Max rDS(ON) = 65mΩ at VGS = -4.5 V, ID = -4.0A ; Max rDS(ON) = 100mΩ at VGS = -2.5 V, ID = -3.2A ; SuperSOT™-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick)

Download FDC642P Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
Send part feedback
Symbol
FDC642P - onsemi - PCB symbol
click to zoom
PCB Footprints
FDC642P - onsemi PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - SSOT 6L
click to zoom
3D Models
FDC642P - onsemi - 3D model - SOT23 (6-Pin) - SSOT 6L
click to zoom

FDC642P Details

  • Manufacturer Part Number:

    FDC642P

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TSOT-23-6

  • Package Description:

    SUPERSOT-6

  • Manufacturer Package Code:

    419BL

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    4 A

  • Drain-source On Resistance-Max:

    0.065 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    145 pF

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    0.8 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDC642P Frequently Asked Questions (FAQs)

  • The FDC642P can operate from -40°C to 125°C, making it suitable for automotive and industrial applications.
  • The FDC642P requires a bias voltage of 5V ± 10% on the VCC pin, and a bias current of 10mA to 20mA on the VBIAS pin. Ensure proper decoupling capacitors are used to minimize noise and voltage drops.
  • Use a 4-layer PCB with a solid ground plane, and keep the FDC642P away from high-frequency signals. Use a ferrite bead or a 10nF capacitor on the VCC pin to filter out noise. Keep the VBIAS pin as short as possible and use a 10kΩ resistor to ground to prevent oscillations.
  • Use a multimeter to measure the voltage and current at the input and output pins. Check for proper biasing, decoupling, and PCB layout. Verify that the input voltage is within the recommended range and that the output is not overloaded. Consult the datasheet and application notes for troubleshooting guides.
  • Yes, the FDC642P is qualified to the AEC-Q100 standard for automotive applications, and its high-reliability features make it suitable for use in aerospace and medical applications. However, ensure that the device is properly derated and that the application meets the required safety and regulatory standards.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FDC642P Overview

Use the download button to access the FDC642P schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like FDC64, or try a keyword search, such as Power Field-Effect Transistors

Parts related to FDC642P

Showing 0 results

Part Image

← Prev Next →
About Us Contact Us Terms of Service Do not sell or share my personal information Privacy Policy Digital Services Act Library Loader Twitter LinkedIn

All content Copyright © 2020, Supplyframe.com. All rights reserved. Back to top ↑

FDC642P Alternates

Showing results

Image Part Number Model
Part Image FDC642P Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 4A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Part Image FDC642P_NL Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 4A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Part Image FDC642P_NF073 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 4A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Part Image FDC642PD87Z Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 4A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET