FDC654P - onsemi
Description: −3.6 A, −30 V. RDS(ON) = 75 m @ VGS = −10 V RDS(ON) = 125 m @ VGS = −4.5 V Low Gate Charge (6.2 nC typical) High Performance Trench Technology for Extremely Low RDS(ON) These Device is Pb−Free and Halogen Free
Description: −3.6 A, −30 V. RDS(ON) = 75 m @ VGS = −10 V RDS(ON) = 125 m @ VGS = −4.5 V Low Gate Charge (6.2 nC typical) High Performance Trench Technology for Extremely Low RDS(ON) These Device is Pb−Free and Halogen Free
