FDC658AP - onsemi
Description: RoHS Compliant ; Low Gate Charge ; High performance trench technology for extremely lowrDS(on) ; Max rDS(on) = 75 mΩ @ VGS = -4.5 V, ID = -3.4A ; Max rDS(on) = 50 mΩ @ VGS = -10 V, ID = -4A
Description: RoHS Compliant ; Low Gate Charge ; High performance trench technology for extremely lowrDS(on) ; Max rDS(on) = 75 mΩ @ VGS = -4.5 V, ID = -3.4A ; Max rDS(on) = 50 mΩ @ VGS = -10 V, ID = -4A
