FDD4N60NZ - onsemi
Description: ESD improved capability; Improved dv/dt capability; Low gate charge ( Typ. 8.3nC); RDS(on) = 1.9Ω ( Typ.)@ VGS = 10V, ID = 1.7A; RoHS compliant; 100% avalanche tested; Low Crss ( Typ. 3.7pF)
Description: ESD improved capability; Improved dv/dt capability; Low gate charge ( Typ. 8.3nC); RDS(on) = 1.9Ω ( Typ.)@ VGS = 10V, ID = 1.7A; RoHS compliant; 100% avalanche tested; Low Crss ( Typ. 3.7pF)
