FDD86113LZ - onsemi

Description: Shielded Gate MOSFET Technology; Max rDS(on) = 104 mΩ at VGS = 10 V, ID = 4.2 A; Max rDS(on) = 156 mΩ at VGS = 4.5 V, ID = 3.4 A; HBM SD Protection Level > 6 kV typical (Note 4); High Performance Trench Technology for Extremely Low rDS(on); High Power and Current Handling Capability in a widely used surface mount package; 100% UIL Tested; RoHS Compliant