FDH44N50 - onsemi

Description: Reduced RDS(on) ( 110mΩ ( Typ.)@ VGS = 10V, ID = 22A); Improved switching speed with low EMI; 175oC rated junction temperature; Low gate charge Qg results in simple drive requirement ( Typ. 90nC); Improved Gate, avalanche and high reapplied dv/dt ruggedness; Reduced Miller capacitance and low Input capacitance ( Typ. Crss = 40pF)