FDMA410NZ - onsemi

Description: Max rDS(on) = 29 mΩ at VGS = 2.5 V, ID = 8.0 A ; HBM ESD protection level > 2.5 kV (Note 3) ; RoHS Compliant ; Max rDS(on) = 36 mΩ at VGS = 1.8 V, ID = 4.0 A ; Free from halogenated compounds and antimony oxides ; Low Profile-0.8 mm maximum in the new package MicroFET 2x2 mm ; Max rDS(on) = 23 mΩ at VGS = 4.5 V, ID = 9.5 A ; Max rDS(on) = 50 mΩ at VGS = 1.5 V, ID = 2.0 A