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FDMA410NZ - onsemi

Description: Max rDS(on) = 29 mΩ at VGS = 2.5 V, ID = 8.0 A ; HBM ESD protection level > 2.5 kV (Note 3) ; RoHS Compliant ; Max rDS(on) = 36 mΩ at VGS = 1.8 V, ID = 4.0 A ; Free from halogenated compounds and antimony oxides ; Low Profile-0.8 mm maximum in the new package MicroFET 2x2 mm ; Max rDS(on) = 23 mΩ at VGS = 4.5 V, ID = 9.5 A ; Max rDS(on) = 50 mΩ at VGS = 1.5 V, ID = 2.0 A

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PCB Footprints
FDMA410NZ - onsemi PCB footprint - Other - Other - WDFN6 2x2, 0.65P CASE 511CZ ISSUE O_FFW
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3D Models
FDMA410NZ - onsemi  - 3D model - Other - WDFN6 2x2, 0.65P CASE 511CZ ISSUE O_FFW
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FDMA410NZ Details

  • Manufacturer Part Number:

    FDMA410NZ

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    WDFN-6

  • Package Description:

    WDFN-6

  • Manufacturer Package Code:

    511CZ

  • Country Of Origin:

    Thailand

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    9.5 A

  • Drain-source On Resistance-Max:

    0.023 Ω

  • FET Technology:

    TRENCH MOSFET

  • Feedback Cap-Max (Crss):

    130 pF

  • JESD-30 Code:

    S-PDSO-N6

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.4 W

  • Pulsed Drain Current-Max (IDM):

    24 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    54 ns

  • Turn-on Time-Max (ton):

    25 ns

FDMA410NZ Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1mm clearance around the device for airflow and heat dissipation.
  • Implement a robust thermal management system, including a heat sink and thermal interface material. Ensure the device is operated within the recommended junction temperature range (TJ) of -40°C to 150°C.
  • Monitor the device's temperature, voltage, and current. Implement over-temperature protection (OTP), over-voltage protection (OVP), and over-current protection (OCP) to prevent damage and ensure reliable operation.
  • Consult the application notes and reference designs provided by onsemi. Optimize the device's configuration, including the gate driver, bootstrap capacitor, and output filter, to meet specific application requirements.
  • Follow standard ESD handling procedures, including the use of ESD-protective packaging, wrist straps, and workbenches. Ensure the device is handled and stored in a static-protected environment.

Trust Checks

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Manufacturer Collaborated
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FDMA410NZ Overview

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Part Image FDMA410NZ Fairchild Semiconductor Corporation

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