FDMA4 Model Download Search Results
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FDMA430NZ
onsemi
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1 | RoHS Compliant ; Low Profile-0.8mm maximum-in the new packageMicroFET 2x2 mm ; HBM ESD protection level > 2.5k V typical (Note 3) ; Free from halogenated compounds and antimony oxides ; RDS(on) = 40mΩ @ VGS = 4.5 V, ID = 5.0A ; RDS(on) = 50mΩ@ VGS = 2.5 V, ID = 4.5A | Other | FDMA430NZ |
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FDMA410NZT
onsemi
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1 | 0.55mm max package height MicroFET 2x2mm Package ; Max rDS(on) = 23 mΩ at VGS = 4.5 V, ID = 9.5 A ; Pb Free and Free from halogenated compounds and antimony oxides ; Max rDS(on) = 29 mΩ at VGS = 2.5 V, ID = 8.0 A ; Max rDS(on) = 36 mΩ at VGS = 1.8 V, ID = 4.0 A ; Max rDS(on) = 50 m: at VGS = 1.5 V, ID = 2.0 A ; HBM ESD protection level >2.5 kV ( Note 3) | Other | FDMA410NZT |
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FDMA410NZ
onsemi
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1 | Max rDS(on) = 29 mΩ at VGS = 2.5 V, ID = 8.0 A ; HBM ESD protection level > 2.5 kV (Note 3) ; RoHS Compliant ; Max rDS(on) = 36 mΩ at VGS = 1.8 V, ID = 4.0 A ; Free from halogenated compounds and antimony oxides ; Low Profile-0.8 mm maximum in the new package MicroFET 2x2 mm ; Max rDS(on) = 23 mΩ at VGS = 4.5 V, ID = 9.5 A ; Max rDS(on) = 50 mΩ at VGS = 1.5 V, ID = 2.0 A | Other | FDMA410NZ |
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FDMA410NZ
Fairchild Semiconductor Corporation
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1 | Small Signal Field-Effect Transistor, 9.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FDMA410NZ |
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FDMA410NZ
Rochester Electronics LLC
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1 | 9500mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, 2 X 2 MM, 0.80 MM HEIGHT, ROHS COMPLIANT, MO-229, MICROFET-6 | FDMA410NZ |
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FDMA420NZ
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 5.7A I(D), 20V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FDMA420NZ |
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FDMA410NZT-F130
onsemi
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1 | Power Field-Effect Transistor, 9.5A I(D), 20V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FDMA410NZT-F130 |
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FDMA410NZT
Fairchild Semiconductor Corporation
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1 | Small Signal Field-Effect Transistor | FDMA410NZT |
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FDMA430NZ
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 5A I(D), 30V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FDMA430NZ |
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FDMA420NZ
onsemi
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1 | RDS(on) = 30mΩ @ VGS = 4.5 V, ID = 5.7A ; Low Profile-0.8mm maximum-in the new packageMicroFET 2x2 mm ; RDS(on) = 40mΩ @ VGS = 2.5 V, ID = 5.0A ; HBM ESD protection level 2.5k V typical (Note 3) ; RoHS Compliant ; Free from halogenated compounds and antimony oxides | FDMA420NZ |
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FC80TFDMA4.0
Fox Electronics
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1 | Parallel - Fundamental Quartz Crystal, 4MHz Nom | FC80TFDMA4.0 |
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