FDME1023PZT - onsemi

Description: Free from halogenated compounds and antimony oxides ; Max rDS(on) = 142 mΩ at VGS = -4.5 V, ID = -2.3 A ; Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin; RoHS Compliant ; Max rDS(on)= 331 mΩ at VGS = -1.8 V, ID = -1.5 A ; Max rDS(on) = 530 mΩ at VGS = -1.5 V, ID = -1.2 A ; Max rDS(on) = 213 mΩ at VGS = -2.5 V, ID = -1.8 A ; HBM ESD protection level > 1600V (Note3)