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FDME1023PZT - onsemi

Description: Free from halogenated compounds and antimony oxides ; Max rDS(on) = 142 mΩ at VGS = -4.5 V, ID = -2.3 A ; Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin; RoHS Compliant ; Max rDS(on)= 331 mΩ at VGS = -1.8 V, ID = -1.5 A ; Max rDS(on) = 530 mΩ at VGS = -1.5 V, ID = -1.2 A ; Max rDS(on) = 213 mΩ at VGS = -2.5 V, ID = -1.8 A ; HBM ESD protection level > 1600V (Note3)

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PCB Footprints
FDME1023PZT - onsemi PCB footprint - Other - Other - UDFN6 1.6x1.6, 0.5P CASE 517DW ISSUE O
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FDME1023PZT - onsemi  - 3D model - Other - UDFN6 1.6x1.6, 0.5P CASE 517DW ISSUE O
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FDME1023PZT Details

  • Manufacturer Part Number:

    FDME1023PZT

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    UDFN-6

  • Package Description:

    1.60 X 1.60 MM, HALOGEN FREE AND ROHS COMPLIANT, THIN, MICROFET-6

  • Manufacturer Package Code:

    517DW

  • Country Of Origin:

    Thailand

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    ESD PROTECTION

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    2.6 A

  • Drain-source On Resistance-Max:

    0.142 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    75 pF

  • JESD-30 Code:

    S-PDSO-N6

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    1.3 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDME1023PZT Frequently Asked Questions (FAQs)

  • A good PCB layout for FDME1023PZT involves keeping the input and output traces short and symmetrical, using a solid ground plane, and placing decoupling capacitors close to the device. A 4-layer PCB with a dedicated power plane and a solid ground plane is recommended.
  • To ensure the stability of the output voltage, it is recommended to use a minimum output capacitance of 10uF, and to place a 1uF ceramic capacitor in parallel with a 10uF electrolytic capacitor. Additionally, the output voltage should be monitored and adjusted as needed to prevent oscillations.
  • The maximum ambient temperature range for FDME1023PZT is -40°C to 125°C. However, the device's performance and reliability may degrade at temperatures above 85°C, so it is recommended to operate the device within a temperature range of -40°C to 85°C for optimal performance.
  • Yes, FDME1023PZT is suitable for high-reliability applications. It is manufactured using a robust process and has undergone rigorous testing to ensure its reliability. However, it is recommended to follow proper design and manufacturing guidelines to ensure the device's reliability in the specific application.
  • To troubleshoot issues with FDME1023PZT, start by checking the input voltage, output voltage, and output current. Verify that the device is properly soldered and that there are no signs of physical damage. Use an oscilloscope to check for oscillations or other anomalies. If the issue persists, consult the datasheet and application notes, or contact onsemi's technical support team for assistance.

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FDME1023PZT Overview

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Part Image FDME1023PZT Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 2.6A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET