FDME1034CZT - onsemi

Description: Q1: N-Channel Max. RDS(on) = 66 mΩ at VGS = 4.5 V, ID = 3.4A Max. RDS(on) = 86 mΩ at VGS = 2.5 V, ID = 2.9A Max. RDS(on) = 113 mΩ at VGS = 1.8 V, ID = 2.5A Max. RDS(on) = 160 mΩ at VGS= 1.5 V, ID = 2.1A; Free from halogenated compounds and antimony oxides ; Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin; HBM ESD protection level > 1600V (see datasheet Note 3); Q2: P-Channel Max. RDS(on) = 142 mΩ at VGS = -4.5 V, ID = -2.3A Max. RDS(on) = 213 mΩ at VGS = -2.5 V, ID = -1.8A Max. RDS(on)