FDMS1D2N03DSD - onsemi

Description: Q1: Max RDS(on) = 4.0 mOhm at Vgs = 4.5V; Q2: Max RDS(on) = 0.97 mOhm at Vgs = 10V; Q2: Max RDS(on) = 1.25 mOhm at Vgs = 4.5V; Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses; MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing; Q1: Max RDS(on) = 3.25 mOhm at Vgs = 10V