FDMS3660S - onsemi

Description: Q2: N-Channel Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A Max rDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 27 A ; Low inductance packaging shortens rise/fall times, resulting in lower switching losses ; Q1: N-Channel Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A; MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing ; RoHS Compliant