FDMS4D4N08C - onsemi

Description: Shielded Gate MOSFET Technology ; Max rDS(on) = 10.4 mΩ at VGS = 6 V, ID = 22 A ; MSL1 Robust Package Design ; 50% Lower Qrr than Other MOSFET Suppliers ; Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 44 A ; 100% UIL Tested ; RoHS Compliant ; Lowers Switching Noise/EMI