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FDMS4D4N08C - onsemi

Description: Shielded Gate MOSFET Technology ; Max rDS(on) = 10.4 mΩ at VGS = 6 V, ID = 22 A ; MSL1 Robust Package Design ; 50% Lower Qrr than Other MOSFET Suppliers ; Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 44 A ; 100% UIL Tested ; RoHS Compliant ; Lowers Switching Noise/EMI

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PCB Footprints
FDMS4D4N08C - onsemi PCB footprint - Other - Other - PQFN8 5X6, 1.27P CASE 483AE ISSUE A
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3D Models
FDMS4D4N08C - onsemi  - 3D model - Other - PQFN8 5X6, 1.27P CASE 483AE ISSUE A
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FDMS4D4N08C Details

  • Manufacturer Part Number:

    FDMS4D4N08C

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    PQFN-8

  • Manufacturer Package Code:

    483AE

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Date Of Intro:

    2017-02-03

  • Manufacturer:

    onsemi

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    486 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    123 A

  • Drain-source On Resistance-Max:

    0.0043 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    50 pF

  • JEDEC-95 Code:

    MO-240AA

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    125 W

  • Pulsed Drain Current-Max (IDM):

    498 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    50 ns

  • Turn-on Time-Max (ton):

    46 ns

FDMS4D4N08C Frequently Asked Questions (FAQs)

  • The maximum operating frequency of the FDMS4D4N08C is 100 MHz.
  • To ensure proper biasing, connect the VCC pin to a stable 3.3V power supply, and the VEE pin to a stable -5V power supply. Also, ensure that the input signals are within the recommended voltage range.
  • To minimize noise and signal degradation, use a multi-layer PCB with a solid ground plane, and keep the signal traces as short as possible. Also, use a 50-ohm transmission line impedance for the input and output signals.
  • To handle thermal management, ensure good airflow around the device, and consider using a heat sink or thermal pad to dissipate heat. Also, avoid operating the device at maximum power for extended periods.
  • For optimal performance, use a 50-ohm termination resistor at the input and output pins, and ensure that the termination resistors are as close to the device pins as possible.

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FDMS4D4N08C Overview

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