FDMS4 Model Download Search Results
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FDMS4D0N12C
onsemi
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1 | Shielded Gate MOSFET Technology ; Max rDS(on) = 4.0 mΩ at VGS = 10 V, ID = 67 A ; Max rDS(on) = 8.0 mΩ at VGS = 6 V, ID = 33 A ; 50% Lower Qrr than Other MOSFET Suppliers; Lowers Switching Noise/EMI ; MSL1 Robust Package Design ; 100% UIL Tested ; RoHS Compliant | Other | FDMS4D0N12C |
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FDMS4435BZ
onsemi
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1 | Max rDS(on) = 37 mΩ at VGS = -4.5 V, ID = -6.5 A; HBM ESD protection level >7 kV typical (Note 4); Termination is Lead-free and RoHS Compliant; 100% UIL tested; High performance trench technology for extremely low rDS(on); Max rDS(on) = 20 mΩ at VGS = -10 V, ID = -9.0 A; Extended VGSS range (-25 V) for battery applications; High power and current handling capability | Other | FDMS4435BZ |
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FDMS4D4N08C
onsemi
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1 | Shielded Gate MOSFET Technology ; Max rDS(on) = 10.4 mΩ at VGS = 6 V, ID = 22 A ; MSL1 Robust Package Design ; 50% Lower Qrr than Other MOSFET Suppliers ; Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 44 A ; 100% UIL Tested ; RoHS Compliant ; Lowers Switching Noise/EMI | Other | FDMS4D4N08C |
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FDMS4D5N08LC
onsemi
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1 | Power Field-Effect Transistor, 116A I(D), 80V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA | FDMS4D5N08LC |
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FDMS4435BZ
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 9A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA | FDMS4435BZ |
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