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FDMS4435BZ - onsemi

Description: Max rDS(on) = 37 mΩ at VGS = -4.5 V, ID = -6.5 A; HBM ESD protection level >7 kV typical (Note 4); Termination is Lead-free and RoHS Compliant; 100% UIL tested; High performance trench technology for extremely low rDS(on); Max rDS(on) = 20 mΩ at VGS = -10 V, ID = -9.0 A; Extended VGSS range (-25 V) for battery applications; High power and current handling capability

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PCB Footprints
FDMS4435BZ - onsemi PCB footprint - Other - Other - PQFN8 5X6, 1.27P CASE 483AE ISSUE B_2021
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3D Models
FDMS4435BZ - onsemi  - 3D model - Other - PQFN8 5X6, 1.27P CASE 483AE ISSUE B_2021
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FDMS4435BZ Details

  • Manufacturer Part Number:

    FDMS4435BZ

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    PQFN-8

  • Package Description:

    ROHS COMPLIANT, POWER 56, 8 PIN

  • Manufacturer Package Code:

    483AE

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.4

  • Additional Feature:

    ULTRA-LOW RESISTANCE

  • Avalanche Energy Rating (Eas):

    18 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    9 A

  • Drain-source On Resistance-Max:

    0.02 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MO-240AA

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    39 W

  • Pulsed Drain Current-Max (IDM):

    50 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDMS4435BZ Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermal interface material (TIM) between the device and heat sink, and follow the recommended PCB layout guidelines. Also, consider derating the device's power handling at high temperatures.
  • The maximum allowed voltage on the enable pin (EN) is 6V. Exceeding this voltage may damage the device.
  • Yes, the FDMS4435BZ is suitable for high-frequency switching applications up to 1 MHz. However, ensure proper PCB layout, decoupling, and filtering to minimize electromagnetic interference (EMI).
  • Use a TVS (transient voltage suppressor) or a zener diode to clamp voltage transients. Also, ensure proper PCB layout and decoupling to minimize voltage spikes and ringing.

Trust Checks

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Manufacturer Collaborated
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FDMS4435BZ Overview

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