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FDMS4D0N12C - onsemi

Description: Shielded Gate MOSFET Technology ; Max rDS(on) = 4.0 mΩ at VGS = 10 V, ID = 67 A ; Max rDS(on) = 8.0 mΩ at VGS = 6 V, ID = 33 A ; 50% Lower Qrr than Other MOSFET Suppliers; Lowers Switching Noise/EMI ; MSL1 Robust Package Design ; 100% UIL Tested ; RoHS Compliant

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PCB Footprints
FDMS4D0N12C - onsemi PCB footprint - Other - Other - FDMS4D0N12C-2
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FDMS4D0N12C - onsemi  - 3D model - Other - FDMS4D0N12C-2
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FDMS4D0N12C Details

  • Manufacturer Part Number:

    FDMS4D0N12C

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    PQFN-8

  • Package Description:

    QFN-8

  • Manufacturer Package Code:

    483AF

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6.2

  • Avalanche Energy Rating (Eas):

    222 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    120 V

  • Drain Current-Max (ID):

    114 A

  • Drain-source On Resistance-Max:

    0.004 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    24 pF

  • JEDEC-95 Code:

    MO-240AA

  • JESD-30 Code:

    S-PDSO-N5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    106 W

  • Pulsed Drain Current-Max (IDM):

    628 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    114 ns

  • Turn-on Time-Max (ton):

    57 ns

FDMS4D0N12C Frequently Asked Questions (FAQs)

  • The maximum operating frequency of the FDMS4D0N12C is 100 kHz, but it can be operated at higher frequencies with reduced performance.
  • To ensure proper biasing, connect the gate to a voltage source through a resistor, and connect the source to ground through a resistor. The recommended bias voltage is 12V.
  • The maximum power dissipation of the FDMS4D0N12C is 125W, but it can be derated based on the ambient temperature and thermal resistance.
  • Yes, the FDMS4D0N12C can operate in high-temperature environments up to 150°C, but the maximum junction temperature should not exceed 175°C.
  • To protect the FDMS4D0N12C from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the device is stored in an anti-static bag or tube.

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FDMS4D0N12C Overview

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