FDMS86150ET100 - onsemi

Description: Max rDS(on) = 7.8 mΩ at VGS = 6 V, ID = 13 A ; Advanced Package and Silicon combination for low rDS(on) and high efficiency ; RoHS Compliant ; 100% UIL tested ; Extended TJ rating to 175°C ; Shielded Gate MOSFET Technology ; MSL1 robust package design ; Max rDS(on) = 4.85 mΩ at VGS = 10 V, ID = 16 A