FDMS86255 - onsemi

Description: Next generation enhanced body diode technology, engineered for soft recovery ; Max rDS(on) = 15.5 mΩ at VGS = 6 V, ID = 8 A ; Advanced Package and Silicon combination for low rDS(on) and high efficiency ; Shielded Gate MOSFET Technology ; RoHS Compliant ; 100% UIL tested ; Max rDS(on) = 12.4 mΩ at VGS = 10 V, ID = 10 A ; MSL1 robust package design