FDN335N - onsemi
Description: High power and current handling capability.; 1.7 A, 20 V; Low gate charge (3.5nC typical).; High performance trench technology for extremely lowRDS(ON).; RDS(on) = 0.07 Ω @ VGS = 4.5 V; RDS(on) = 0.100 Ω @ VGS = 2.5 V
Description: High power and current handling capability.; 1.7 A, 20 V; Low gate charge (3.5nC typical).; High performance trench technology for extremely lowRDS(ON).; RDS(on) = 0.07 Ω @ VGS = 4.5 V; RDS(on) = 0.100 Ω @ VGS = 2.5 V
