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FDN335N - onsemi

Description: High power and current handling capability.; 1.7 A, 20 V; Low gate charge (3.5nC typical).; High performance trench technology for extremely lowRDS(ON).; RDS(on) = 0.07 Ω @ VGS = 4.5 V; RDS(on) = 0.100 Ω @ VGS = 2.5 V

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PCB Footprints
FDN335N - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SuperSOT-3 (FS PKG Code 32)
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3D Models
FDN335N - onsemi  - 3D model - SOT23 (3-Pin) - SuperSOT-3 (FS PKG Code 32)
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FDN335N Details

  • Manufacturer Part Number:

    FDN335N

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23-3

  • Package Description:

    SUPERSOT-3

  • Manufacturer Package Code:

    527AG

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6.95

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    1.7 A

  • Drain-source On Resistance-Max:

    0.07 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDN335N Frequently Asked Questions (FAQs)

  • The maximum SOA for the FDN335N is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A safe operating area can be determined by plotting the device's voltage and current ratings against each other, taking into account the thermal limitations.
  • To ensure proper biasing, follow the recommended biasing circuit and component values provided in the datasheet. Additionally, consider the device's input impedance, output impedance, and gain requirements to ensure optimal performance. It's also important to consider the device's thermal characteristics and ensure proper heat sinking.
  • For optimal thermal performance, ensure the PCB layout provides adequate heat dissipation paths and thermal vias. Use a thermal pad or heat sink to dissipate heat, and consider using thermal interface materials to improve heat transfer. Follow the recommended PCB layout guidelines and thermal management considerations outlined in the datasheet and application notes.
  • To protect the FDN335N from ESD and overvoltage, follow proper handling and storage procedures. Use ESD-safe materials and equipment, and ensure the device is properly grounded during handling. Implement overvoltage protection circuits, such as zener diodes or transient voltage suppressors, to prevent damage from voltage spikes or surges.
  • The FDN335N's reliability and lifespan are dependent on various factors, including operating conditions, temperature, and usage patterns. The device is designed to meet the reliability standards outlined in the datasheet, with a typical lifespan of 10-15 years or more, depending on the application and operating conditions.

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FDN335N Overview

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Part Image NDS335N Fairchild Semiconductor Corporation

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Part Image NDS335NL99Z Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 1.7A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image NDS335ND87Z Fairchild Semiconductor Corporation

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Part Image NDS335N/L99Z Texas Instruments

1700mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB

Part Image FDN335NS62Z Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 1.7A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

For a full list of alternate parts for FDN335N, check out Findchips.com