FDN336P - onsemi

Description: RDS(ON) = 0.20Ω @ VGS= -4.5 V; High performance trench technology for extremely low RDS(ON).; Low gate charge (3.6 nC typical).; RDS(ON) = 0.27 Ω @ VGS= -2.5 V ; SuperSOT™ -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 inthe same footprint; -1.3 A, -20 V.