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FDN336P - onsemi

Description: RDS(ON) = 0.20Ω @ VGS= -4.5 V; High performance trench technology for extremely low RDS(ON).; Low gate charge (3.6 nC typical).; RDS(ON) = 0.27 Ω @ VGS= -2.5 V ; SuperSOT™ -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 inthe same footprint; -1.3 A, -20 V.

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Symbol
FDN336P - onsemi - PCB symbol
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PCB Footprints
FDN336P - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT−23/SUPERSOT−23, 3 LEAD, 1.4x2.9
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3D Models
FDN336P - onsemi - 3D model - SOT23 (3-Pin) - SOT−23/SUPERSOT−23, 3 LEAD, 1.4x2.9
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FDN336P Details

  • Manufacturer Part Number:

    FDN336P

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23-3

  • Package Description:

    SUPERSOT-3

  • Manufacturer Package Code:

    527AG

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6.9

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    1.3 A

  • Drain-source On Resistance-Max:

    0.2 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    0.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDN336P Frequently Asked Questions (FAQs)

  • The FDN336P can operate from -40°C to 150°C, making it suitable for high-reliability applications.
  • The FDN336P requires a bias voltage of 2.5V to 5.5V on the VCC pin, and a bias current of 1mA to 10mA on the IBIAS pin. Ensure proper biasing for optimal performance and to prevent damage to the device.
  • Use a multi-layer PCB with a solid ground plane, and keep the FDN336P away from high-frequency signals and noise sources. Use short, direct traces for the input and output signals, and add decoupling capacitors near the device to reduce noise and EMI.
  • Use voltage regulators and overvoltage protection circuits to prevent voltage exceeding the maximum rating of 5.5V. Add current-limiting resistors or fuses to prevent excessive current draw. Implement thermal protection to prevent overheating.
  • Store the FDN336P in a dry, cool place, away from direct sunlight and moisture. Handle the device by the body, avoiding touching the pins to prevent electrostatic discharge (ESD) damage.

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FDN336P Overview

Use the download button to access the FDN336P schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like FDN33, or try a keyword search, such as Small Signal Field-Effect Transistors

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FDN336P Alternates

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Image Part Number Model
Part Image FDN336P Rochester Electronics LLC

1300mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-3
Part Image FDN336P Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 1.3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Part Image FDN336PD87Z Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 1.3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Part Image FDN336P_NL Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 1.3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Part Image FDN336PS62Z Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 1.3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
For a full list of alternate parts for FDN336P, check out Findchips.com