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FDN86501LZ - onsemi

Description: Fast Switching Speed; 100% UIL Tested; Shielded Gate MOSFET Technology ; Max rDS(on) = 116 mΩ at VGS = 10 V, ID = 2.6 A ; High Performance Trench Technology for Extremely Low rDS(on); Max rDS(on) = 170 mΩ at VGS = 4.5 V, ID = 2.1 A ; RoHS Compliant ; High Power and Current Handling Capability in a Widely Used Surface Mount Package

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