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FDN86501LZ - onsemi

Description: Fast Switching Speed; 100% UIL Tested; Shielded Gate MOSFET Technology ; Max rDS(on) = 116 mΩ at VGS = 10 V, ID = 2.6 A ; High Performance Trench Technology for Extremely Low rDS(on); Max rDS(on) = 170 mΩ at VGS = 4.5 V, ID = 2.1 A ; RoHS Compliant ; High Power and Current Handling Capability in a Widely Used Surface Mount Package

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PCB Footprints
FDN86501LZ - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SSOT-3L
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3D Models
FDN86501LZ - onsemi  - 3D model - SOT23 (3-Pin) - SSOT-3L
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FDN86501LZ Details

  • Manufacturer Part Number:

    FDN86501LZ

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23-3

  • Package Description:

    SOT-23, 3 PIN

  • Manufacturer Package Code:

    527AG

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    11 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.4

  • Avalanche Energy Rating (Eas):

    6 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    2.6 A

  • Drain-source On Resistance-Max:

    0.116 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    10 pF

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.5 W

  • Pulsed Drain Current-Max (IDM):

    24 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    30 ns

  • Turn-on Time-Max (ton):

    20 ns

FDN86501LZ Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Keep the thermal pad connected to the ground plane to ensure good heat dissipation.
  • Ensure the input voltage (VIN) is within the recommended range (4.5V to 18V). Use a stable voltage regulator and decoupling capacitors to minimize noise and ripple.
  • The maximum current rating is 3.5A per channel, but it's recommended to derate the current based on the ambient temperature and PCB thermal design.
  • Use a TVS diode or a zener diode for overvoltage protection. Implement overcurrent protection using a fuse or a current-sensing resistor with a comparator.
  • Use a TVS diode or a dedicated ESD protection device, such as the NUP4301, to protect the device from electrostatic discharge.

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FDN86501LZ Overview

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