FDN86 Model Download Search Results
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FDN86501LZ
onsemi
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1 | Fast Switching Speed; 100% UIL Tested; Shielded Gate MOSFET Technology ; Max rDS(on) = 116 mΩ at VGS = 10 V, ID = 2.6 A ; High Performance Trench Technology for Extremely Low rDS(on); Max rDS(on) = 170 mΩ at VGS = 4.5 V, ID = 2.1 A ; RoHS Compliant ; High Power and Current Handling Capability in a Widely Used Surface Mount Package | SOT23 (3-Pin) | FDN86501LZ |
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FDN86265P
onsemi
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1 | This product is optimised for fast switching applications as well as load switch applications ; Max rDS(on) = 1.4 Ω at VGS = -6 V, ID = -0.7 A ; RoHS Compliant ; Max rDS(on) = 1.2 Ω at VGS = -10 V, ID = -0.8 A ; 100% UIL tested ; Very Low rDS(on) Mid Voltage P-Channel Silicon Technology Optimized for Low Qg | SOT23 (3-Pin) | FDN86265P |
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FDN86246
onsemi
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1 | High Performance Trench Technology for Extremely Low rDS(on); Max rDS(on) = 359 mΩ at VGS = 6 V, ID = 1.4 A ; RoHS Compliant ; 100% UIL Tested; Fast Switching Speed; High Power and Current Handling Capability in a Widely Used Surface Mount Package; Max rDS(on) = 261 mΩ at VGS = 10 V, ID = 1.6 A | SOT23 (3-Pin) | FDN86246 |
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FDN8601
onsemi
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1 | Fast Switching Speed; Max rDS(on) = 109 mΩ at VGS = 10 V, ID = 1.5 A; High Power and Current Handling Capability in a Widely Used Surface Mount Package; Max rDS(on) = 175 mΩ at VGS = 6 V, ID = 1.2 A; RoHS Compliant; High Performance Trench Technology for Extremely Low rDS(on); 100% UIL Tested | SOT23 (3-Pin) | FDN8601 |
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FDN8601
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 2.7A I(D), 100V, 0.109ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FDN8601 |
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FDN86246
Fairchild Semiconductor Corporation
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1 | Small Signal Field-Effect Transistor, 1.6A I(D), 150V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FDN86246 |
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FDN86265P
Fairchild Semiconductor Corporation
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1 | Small Signal Field-Effect Transistor, 0.8A I(D), 150V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | FDN86265P |
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FDN86501LZ
Fairchild Semiconductor Corporation
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1 | Small Signal Field-Effect Transistor | FDN86501LZ |
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FDN8601
Rochester Electronics LLC
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1 | 2700mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SUPERSOT-3 | FDN8601 |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/sot23_3.jpg"])
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