FDP120N10 - onsemi
Description: High Performance Trench Technology for Extremely Low RDS(on); High Power and Current Handling Capability; RoHS compliant; Fast Switching Speed; RDS(on) = 9.7 mΩ ( Typ.)@ VGS = 10V, ID = 74A; Low Gate Charge
Description: High Performance Trench Technology for Extremely Low RDS(on); High Power and Current Handling Capability; RoHS compliant; Fast Switching Speed; RDS(on) = 9.7 mΩ ( Typ.)@ VGS = 10V, ID = 74A; Low Gate Charge
