FDP150N10A-F102 - onsemi

Description: Low Gate Charge, QG = 16.2nC ( Typ.); RDS(on) = 12.5mΩ ( Typ.)@ VGS = 10V, ID = 50A; High Power and Current Handling Capability; High Performance Trench Technology for Extremely Low RDS(on); Fast Switching Speed; RoHS Compliant

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