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FDP150N10A-F102 - onsemi

Description: Low Gate Charge, QG = 16.2nC ( Typ.); RDS(on) = 12.5mΩ ( Typ.)@ VGS = 10V, ID = 50A; High Power and Current Handling Capability; High Performance Trench Technology for Extremely Low RDS(on); Fast Switching Speed; RoHS Compliant

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FDP150N10A-F102 - onsemi - PCB symbol
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PCB Footprints
FDP150N10A-F102 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 CASE 221A ISSUE AK
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3D Models
FDP150N10A-F102 - onsemi - 3D model - Transistor Outline, Vertical - TO-220 CASE 221A ISSUE AK
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FDP150N10A-F102 Details

  • Manufacturer Part Number:

    FDP150N10A-F102

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220 3L

  • Manufacturer Package Code:

    221A

  • Reach Compliance Code:

    Not Compliant

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Configuration:

    SINGLE

  • Drain Current-Max (ID):

    50 A

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Number of Elements:

    1

  • Operating Temperature-Max:

    175 °C

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    91 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

FDP150N10A-F102 Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the FDP150N10A_F102 can withstand is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, ensure good airflow around the device and avoid blocking the heat sink fins.
  • The recommended gate drive voltage for the FDP150N10A_F102 is between 10V and 15V. This ensures reliable switching and minimizes the risk of false triggering.
  • Yes, the FDP150N10A_F102 is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the gate drive circuitry is optimized for high-frequency operation and that the device is properly cooled.
  • To protect the FDP150N10A_F102 from overvoltage and overcurrent, use a voltage clamp circuit and a current sense resistor in series with the device. Additionally, consider using a fuse or a circuit breaker to protect against overcurrent conditions.

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FDP150N10A-F102 Overview

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