FDPC5018SG - onsemi

Description: RoHS Compliant ; Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses ; Q2 N-Channel Max. RDS(on) = 1.6 mΩ at VGS = 10 V, ID = 32 A Max. RDS(on) = 2.0 mΩ at VGS = 4.5 V, ID = 28 A; MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing ; Q1 N-Channel Max. RDS(on) = 5.0 mΩ at VGS = 10 V, ID = 17 A Max. RDS(on) = 6.5 mΩ at VGS = 10 V, ID = 17 A