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FDPC5018SG - onsemi

Description: RoHS Compliant ; Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses ; Q2 N-Channel Max. RDS(on) = 1.6 mΩ at VGS = 10 V, ID = 32 A Max. RDS(on) = 2.0 mΩ at VGS = 4.5 V, ID = 28 A; MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing ; Q1 N-Channel Max. RDS(on) = 5.0 mΩ at VGS = 10 V, ID = 17 A Max. RDS(on) = 6.5 mΩ at VGS = 10 V, ID = 17 A

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FDPC5018SG - onsemi - PCB symbol
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PCB Footprints
FDPC5018SG - onsemi PCB footprint - Other - Other - PQFN8 5.00x6.00x0.75, 1.27P CASE 483AR ISSUE D
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3D Models
FDPC5018SG - onsemi - 3D model - Other - PQFN8 5.00x6.00x0.75, 1.27P CASE 483AR ISSUE D
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FDPC5018SG Details

  • Manufacturer Part Number:

    FDPC5018SG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    PQFN-8

  • Manufacturer Package Code:

    483AR

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    7.2

  • Configuration:

    SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    17 A

  • Drain-source On Resistance-Max:

    0.005 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    60 pF

  • JESD-30 Code:

    R-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDPC5018SG Frequently Asked Questions (FAQs)

  • The maximum power dissipation of the FDPC5018SG is 2.5 W. However, it's essential to consider the thermal resistance and junction temperature to ensure reliable operation.
  • To ensure the stability of the output voltage, it's crucial to follow the recommended layout and component selection guidelines, including the use of a suitable output capacitor and a low-ESR input capacitor.
  • The recommended input capacitor value is 10 μF to 22 μF, and it's recommended to use a low-ESR ceramic capacitor, such as an X5R or X7R type, to minimize voltage ripple and ensure stable operation.
  • The FDPC5018SG is rated for operation up to 125°C, but it's essential to consider the derating curves and thermal management to ensure reliable operation in high-temperature environments.
  • To minimize EMI and noise, it's recommended to follow a star-grounding layout, keep the input and output capacitors close to the device, and use a solid ground plane to reduce radiation and noise coupling.

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FDPC5018SG Overview

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