FDPC8016S - onsemi

Description: Q1 N-Channel Max. RDS(on) = 3.8 mΩ at VGS = 10 V, ID = 20 A Max. RDS(on) = 4.7 mΩ at VGS = 4.5 V, ID = 18 A; Low inductance packaging shortens rise/fall times, resulting in lower switching losses; RoHS Compliant; Q2 N-Channel Max. RDS(on) = 1.4 mΩ at VGS = 10 V, ID = 35 A Max. RDS(on) = 1.7 mΩ at VGS = 4.5 V, ID = 32 A; MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing