FDS4480 - onsemi
Description: High performance trench technology for extremely low RDS(ON); Low gate charge (29nC); High power and current handling capability; 10.8A, 40V. RDS(ON) = 12mΩ @ VGS = 10V
Description: High performance trench technology for extremely low RDS(ON); Low gate charge (29nC); High power and current handling capability; 10.8A, 40V. RDS(ON) = 12mΩ @ VGS = 10V
