FDS6680A - onsemi
Description: Ultra-low gate charge ; High performance trench technology for extremely low RDS(ON) ; RDS(ON) = 13 mΩ @ VGS = 4.5 V ; RDS(ON) = 9.5 mΩ @ VGS = 10 V ; 12.5 A, 30 V ; High power and current handling capability
Description: Ultra-low gate charge ; High performance trench technology for extremely low RDS(ON) ; RDS(ON) = 13 mΩ @ VGS = 4.5 V ; RDS(ON) = 9.5 mΩ @ VGS = 10 V ; 12.5 A, 30 V ; High power and current handling capability
