FDS6690A - onsemi

Description: Low gate charge; High power and current handling capability; RDS(ON) = 12.5 mΩ @ VGS = 10 V; 11 A, 30 V; High performance trench technology for extremely low RDS(ON); Fast switching speed; RDS(ON) = 17.0 mΩ @ VGS = 4.5 V