FDS6875 - onsemi
Description: High power and current handling capability.; Low gate charge (23nC typical).; -6 A, -20 V RDS(ON) = 0.030 Ω @ VGS = -4.5 V RDS(ON) = 0.040 Ω @ VGS = -2.5 V.; High performance trench technology for extremely low RDS(ON).
Description: High power and current handling capability.; Low gate charge (23nC typical).; -6 A, -20 V RDS(ON) = 0.030 Ω @ VGS = -4.5 V RDS(ON) = 0.040 Ω @ VGS = -2.5 V.; High performance trench technology for extremely low RDS(ON).
