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FDS6875 - onsemi

Description: High power and current handling capability.; Low gate charge (23nC typical).; -6 A, -20 V RDS(ON) = 0.030 Ω @ VGS = -4.5 V RDS(ON) = 0.040 Ω @ VGS = -2.5 V.; High performance trench technology for extremely low RDS(ON).

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FDS6875 - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - SOIC-8 NB CASE 751-07 ISSUE AK
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FDS6875 - onsemi  - 3D model - Small Outline Packages - SOIC-8 NB CASE 751-07 ISSUE AK
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FDS6875 Details

  • Manufacturer Part Number:

    FDS6875

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOIC-8

  • Package Description:

    SOIC-8

  • Manufacturer Package Code:

    751EB

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    6 A

  • Drain-source On Resistance-Max:

    0.03 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    2 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDS6875 Frequently Asked Questions (FAQs)

  • The maximum current rating of the FDS6875 is 3.5A per channel, but it's recommended to derate the current to 2.5A per channel for reliable operation.
  • To ensure proper thermal management, it's recommended to attach a heat sink to the device, and ensure good airflow around the device. The thermal pad on the bottom of the package should be connected to a copper plane on the PCB to help dissipate heat.
  • The recommended PCB layout for the FDS6875 involves keeping the high-current paths short and wide, using multiple vias to connect the thermal pad to a copper plane, and keeping the switching nodes away from sensitive analog circuits.
  • To minimize EMI, it's recommended to use a shielded cable for the output, keep the switching frequency below 100 kHz, and use a common-mode choke or ferrite bead on the output to reduce emissions.
  • The recommended input capacitor value for the FDS6875 is 10uF to 22uF, with an X5R or X7R dielectric, and a voltage rating of 25V or higher.

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Part Image FDS6875 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 6A I(D), 20V, 0.03ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET