FDS6975 - onsemi

Description: Low gate charge (14.5nC typical).; High performance trench technology for extremely low RDS(ON).; High power and current handling capability.; -6 A, -30 V RDS(ON) = 0.032 Ω @ VGS = -10 V RDS(ON) = 0.045 Ω @ VGS = -4.5 V.