FDS6986AS - onsemi

Description: Q1 Optimized for low switching losses A, V Max. RDS(on) = 29 mΩ at VGS = 10 V Max. RDS(on) = 38 mΩ at VGS = 4.5 V Low gate charge (10 nC typical); Q2 Optimized to minimize conduction losses Includes SyncFET Schottky body diode 7.9A, 30V Max. RDS(on) = 20 mΩ at VGS = 10 V Max. RDS(on) = 28 mΩ at VGS = 4.5 V