FDS86267P - onsemi

Description: Max rDS(on) = 290 mΩ at VGS = -6 V, ID = -2 A ; RoHS Compliant ; This Product is Optimised for Fast Switching Applications as well as Load Switch Applications ; Very Low rDS(on) Mid Voltage P-channel Silicon Technology Optimised for Low Qg; Max rDS(on) = 255 mΩ at VGS = -10 V, ID = -2.2 A ; Shielded Gate MOSFET Technology ; 100% UIL Tested