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FDS86267P - onsemi

Description: Max rDS(on) = 290 mΩ at VGS = -6 V, ID = -2 A ; RoHS Compliant ; This Product is Optimised for Fast Switching Applications as well as Load Switch Applications ; Very Low rDS(on) Mid Voltage P-channel Silicon Technology Optimised for Low Qg; Max rDS(on) = 255 mΩ at VGS = -10 V, ID = -2.2 A ; Shielded Gate MOSFET Technology ; 100% UIL Tested

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FDS86267P - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - SO-8_2024-1
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FDS86267P - onsemi  - 3D model - Small Outline Packages - SO-8_2024-1
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FDS86267P Details

  • Manufacturer Part Number:

    FDS86267P

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOIC-8

  • Package Description:

    SOP-8

  • Manufacturer Package Code:

    751EB

  • Country Of Origin:

    Thailand

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    11 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.9

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    2.2 A

  • Drain-source On Resistance-Max:

    0.255 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    2.3 pF

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Surface Mount:

    YES

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDS86267P Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Keep the thermal path short and use a thermal pad on the bottom of the package.
  • Ensure the input voltage is within the recommended range (4.5V to 5.5V) and the output voltage is set correctly (e.g., 1.8V or 3.3V). Use a stable voltage reference and decouple the input and output with suitable capacitors.
  • The FDS86267P can handle up to 2A of continuous current. However, it's essential to consider the thermal limitations and ensure proper heat sinking to prevent overheating.
  • Use a voltage supervisor or a power-on reset circuit to monitor the input voltage and ensure the device is only enabled when the voltage is within the recommended range.
  • Use a TVS (Transient Voltage Suppressor) diode or a dedicated ESD protection IC to protect the device from electrostatic discharge events.

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FDS86267P Overview

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