FDS8949 - onsemi
Description: Max rDS(on) = 29mΩ at VGS = 10V; High performance trench technology for extremely low rDS(on); RoHS compliant; High power and current handling capability; Max rDS(on) = 36mΩ at VGS = 4.5V; Low gate charge
Description: Max rDS(on) = 29mΩ at VGS = 10V; High performance trench technology for extremely low rDS(on); RoHS compliant; High power and current handling capability; Max rDS(on) = 36mΩ at VGS = 4.5V; Low gate charge
