FDT1600N10ALZ - onsemi

Description: High Performance Trench Technology for Extremely Low RDS(on); RoHS Compliant; High Power and Current Handling Capability; Low Gate Charge ( Typ.2.9nC); RDS(on) = 121 mΩ ( Typ.)@ VGS = 10 V, ID = 2.8 A; RDS(on) = 156 mΩ ( Typ.)@ VGS = 5 V, ID = 1.8 A; Fast Switching Speed