FDT458P - onsemi

Description: High performance trench technology for extremelylow RDS(on); RDS(ON) = 130 mΩ @ VGS = 10 V; RDS(ON) = 200 mΩ @ VGS = 4.5 V; -3.4 A, -30 V; High power and current handling capability in awidely used surface mount package; Low gate charge (2.5nC typical); Fast switching speed