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FDT458P - onsemi

Description: High performance trench technology for extremelylow RDS(on); RDS(ON) = 130 mΩ @ VGS = 10 V; RDS(ON) = 200 mΩ @ VGS = 4.5 V; -3.4 A, -30 V; High power and current handling capability in awidely used surface mount package; Low gate charge (2.5nC typical); Fast switching speed

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PCB Footprints
FDT458P - onsemi PCB footprint - SOT223 (3-Pin) - SOT223 (3-Pin) - SOT-223_1
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3D Models
FDT458P - onsemi  - 3D model - SOT223 (3-Pin) - SOT-223_1
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FDT458P Details

  • Manufacturer Part Number:

    FDT458P

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-223-4 / TO-261-4

  • Manufacturer Package Code:

    318H-01

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.15

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    3.4 A

  • Drain-source On Resistance-Max:

    0.13 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    1.1 W

  • Pulsed Drain Current-Max (IDM):

    10 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDT458P Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FDT458P is -40°C to 150°C.
  • To ensure proper biasing, connect the gate to a voltage source through a resistor, and connect the source to a voltage source or ground through a resistor. Consult the datasheet for specific biasing requirements.
  • To minimize thermal resistance, use a thermal pad on the PCB, and ensure good thermal conductivity between the device and the PCB. A heat sink or thermal interface material can also be used to improve heat dissipation.
  • To protect the FDT458P from ESD, handle the device in an ESD-controlled environment, use ESD-protective packaging, and ensure that all equipment and tools are properly grounded.
  • The maximum current rating for the FDT458P is 4.5 A. However, this rating may vary depending on the specific application and operating conditions.

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FDT458P Overview

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Part Image FDT458P_NL Fairchild Semiconductor Corporation

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